Abstract
An electrolyte-semiconductor contact is used to study the conductivity of epitaxial layers and single crystals of n-type indium phosphide obtained by gas transport. Some of the specimens were alloyed with tin and sulfur. The voltfarad characteristics are used to find the potentials of planar zones, which amount to 0.8–1.3 V for different electrolytes. Values of concentration of charge carriers calculated from measured values of capacitance of the electrolyte-indium-phosphide contact showed good agreement with measurements of the Hall effect on single crystals in the range 1016-1018cm−3. The use of measurements of the capacitance of the electrolyte-semiconductor contact with simultaneous etching of a local region made it possible to study the electron distribution in epitaxial layers of indium phosphide.
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Literature cited
S. Aytac and A. Schlachetzki, Solid-State Electron.,25, No. 11, 1135 (1982).
V. A. Vdovenkov, A. M. Zubkov, and N. V. Korotkova, Élektron. Tekh., Ser. 2, Poluprovodn. Pribory, No. 5 (156), 12 (1982).
B. Tuck, G. Eftekhari, and D. M. de Cogan, J. Phys. D,15, No. 3, 456 (1982).
T. P. Kolmakova and G. G. Lymar', Élektron. Tekh., Ser. 2, Poluprovodn. Pribory,5 (156), 77 (1982).
T. Ambridge and D. I. Ashen, Électron. Lett.,15, No. 20, 647 (1979).
D. L. Lile and D. A. Collins, Électron. Lett.,14, No. 15, 457–458 (1978).
O. M. Saanov, V. G. Kustov, and N. D. Grankina, Transactions of the 3rd International Conference on Physicochemical Principles of the Production of Electronics Materials, Ulan-Ude (1981).
O. M. Asanov, V. G. Kustov, A. N. Sivkov, and V. N. Tumanov, Information Sheet, VIMI No. 82-1991-1982.
O. M. Asnov, V. I. Gaman, and L. P. Porokhovnichenko, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 2, 101 (1985).
V. I. Fistul, Heavily-Doped Semiconductors, Nauka, Moscow (1967).
M. D. Vilisova, O. M. Ivleva, A. M. Krasil'nikova, L. P. Porokhovnichenko, and M. P. Yakubenya, Summary of Documents of the 4th All-Union Conference “Structural Defects in Semiconductors,” Vol. 1, Novosibirsk (1984), p. 100.
P. J. Dean, M. S. Skolnick, and L. L. Taylor, J. Appl. Phys.,55, No. 4, 957 (1984).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 71–74, May, 1987.
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Asanov, O.M., Gaman, V.I., Zorkal'tseva, N.N. et al. Measurement of charge-carrier concentration in indium phosphide by means of an electrolyte-semiconductor contact. Soviet Physics Journal 30, 421–424 (1987). https://doi.org/10.1007/BF00900095
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DOI: https://doi.org/10.1007/BF00900095