Abstract
The dependence of persistent photoconductivity on illumination dose is studied forn-type GaAs epitaxial layers on Cr-doped semi-insulating GaAs substrates. Mobility and electron number, but not necessarily density, are enhanced by illumination. The logarithmic dependence of the persistent electron number on illumination dose is explained with a macroscopic potential barrier between layer and substrate, with holes being trapped in the substrate. The mobility enhancement is attributed to screening of ionized impurities by the photogenerated electrons.
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References
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