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Scintillation effect in close collisions of electrons with atoms in molecular channeling

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

Molecular (111)-plane channeling of fast electrons in silicon is studied. The probability of electron localization along the cross section of the planar channel, the probability of populating molecular quantum states, and the orientational and energy dependence of the output of close electron-atom collisions are calculated. It is predicted that the scintillation occurs in the output of close collisions.

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Authors and Affiliations

  1. S. M. Kirov Tomsk Polytechnical Institute, USSR

    S. A. Vorob'ev, D. E. Popov & S. E. Savushkin

Authors
  1. S. A. Vorob'ev
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  2. D. E. Popov
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  3. S. E. Savushkin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 86–92, December, 1985.

In conclusion, we thank Professor N. P. Kalashnikov for a useful discussion of the results.

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Vorob'ev, S.A., Popov, D.E. & Savushkin, S.E. Scintillation effect in close collisions of electrons with atoms in molecular channeling. Soviet Physics Journal 28, 1025–1030 (1985). https://doi.org/10.1007/BF00899099

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  • DOI: https://doi.org/10.1007/BF00899099

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