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Optical characteristics of implanted silicon films

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

The first data are presented on the change (following implantation) in the refractive index and the band structure of silicon on sapphire films. The implantation was effected with phosphor ions of 40 keV and doses from 1012 to 1016 cm−2. An increase following implantation of the refractive index and the energy of the first direct allowed transitions E1 is noted, indicating changes in the second coordination sphere. The profile E1(x) is studied pointing to heterogenization effects. The films were annealed with ruby laser pulses of 0.2 J/cm2. The same laser was used to study the lux dependence of the injection level Δn and surface photo-emf VΦ. Hysteresis in the VΦ(Δn) dependence (after the use of maximum intensity of the laser beam) is noted indicating irreversible straightening of the bands at the film surface.

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Authors and Affiliations

  1. Marshal I. I. Yakubovskii Kiev Higher Tank School, Institute of Semiconductors, Academy of Sciences of the Ukrainian SSR, USSR

    V. I. Gavrilenko, V. A. Zuev, T. M. Kalandadze, V. G. Litovchenko & V. G. Popov

Authors
  1. V. I. Gavrilenko
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  2. V. A. Zuev
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  3. T. M. Kalandadze
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  4. V. G. Litovchenko
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  5. V. G. Popov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 40–43, May, 1984.

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Gavrilenko, V.I., Zuev, V.A., Kalandadze, T.M. et al. Optical characteristics of implanted silicon films. Soviet Physics Journal 27, 385–388 (1984). https://doi.org/10.1007/BF00898607

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  • DOI: https://doi.org/10.1007/BF00898607

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