Abstract
We have studied the spectrum of surface electron states and the height (ΦB) of the Schottky barrier in silicon-nickel structures when a nonuniform deformation is present. We show that the decrease in the barrier height ΦB caused by the deformation is due both to a change in the silicon band gap and to a deformation of the spectrum of the surface electron states.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 6–9, May, 1984.
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Kanchukovskii, O.P., Moroz, L.V., Sadova, N.N. et al. Spectrum of surface electron states and the height of the nickel-silicon Schottky barrier in the presence of nonuniform deformation. Soviet Physics Journal 27, 358–360 (1984). https://doi.org/10.1007/BF00898599
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DOI: https://doi.org/10.1007/BF00898599