Abstract
Complex investigations of the recombination radiation from monocrystals of p-CdSiAs2, thermally processed together with pure indium, which is accompanied by a conversion to p → n conductivity at a given depth, are reported. The effect of the thermal processing on the spectral shape and position of the maxima in the formed energy bands was determined. It was found that an increase in the time and temperature of the thermal processing is associated with a band shift in the direction of longer wavelength portion of the spectrum. The nature of the dominant radiative transitions is discussed.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 78–84, October, 1991.
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Mamedov, A., Rud', V.Y., Rud', Y.V. et al. Investigation of the recombination radiation from layers of n-CdSiAs2 . Soviet Physics Journal 34, 912–917 (1991). https://doi.org/10.1007/BF00898590
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DOI: https://doi.org/10.1007/BF00898590