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Properties of electron-sensitive detectors with a Schottky barrier

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

A comparative study is performed of Schottky barrier structures based on Si and GaAs as photoelements and detectors of electrons with energies of 40 and 60 keV. It is shown that introduction of a dielectric interlayer between the metal and semiconductor 1.5–3 nm thick permits increase in ic and Vx of the structures in both the photodetector and electron count regimes. A complex temperature dependence of structure properties in the electron count regime was found, depending on barrier metal thickness and electron energy.

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Authors and Affiliations

  1. T. G. Shevchenko State University, Kiev

    V. A. Skryshevskii, S. V. Litvinenko & V. I. Strikha

Authors
  1. V. A. Skryshevskii
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  2. S. V. Litvinenko
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  3. V. I. Strikha
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 76–81, April, 1991.

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Skryshevskii, V.A., Litvinenko, S.V. & Strikha, V.I. Properties of electron-sensitive detectors with a Schottky barrier. Soviet Physics Journal 34, 343–347 (1991). https://doi.org/10.1007/BF00898101

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  • DOI: https://doi.org/10.1007/BF00898101

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