Abstract
A model of nonuniform potential relief (modulated by adsorption of oxygen and an applied electric field) of a film containing centers of slow recombination distributed over the volume of a crystallite and centers of fast recombination localized on their boundaries is studied. The characteristic features of the current-voltage characteristics (CVC) of the photocurrent and the effect of adsorption of oxygen on the photoconductivity in semiconductors with intercrystallite barriers were studied. The saturation of the CVC is determined by the transformation of the surface trap levels into centers of fast recombination under the action of an electric field. The proposed model permits explaining from a unified viewpoint the sensitization and desensitization of a semiconductor as a result of oxygen chemisorption.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 56–60, March, 1989.
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Golovanov, V.V., Smyntyna, V.A., Chemeresyuk, G.G. et al. Characteristics of recombination in semiconductors with intercrystallite barriers. Soviet Physics Journal 32, 203–206 (1989). https://doi.org/10.1007/BF00897385
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DOI: https://doi.org/10.1007/BF00897385