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Selection of the model of an impurity energy spectrum of a semiconductor by the method of optimizing the parameters of the neutrality equation

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Abstract

Certain regularities are established which permit tracing the influence of the second level on the results of computing impurity center parameters by means of the results of an analysis of the log p(1/T) curve by using a “one-level” model. It is shown that the value of the impurity center degeneration factor can be the criterion for correspondence between the model selected and the true energy spectrum of the semiconductor.

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Literature cited

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    M. A. Krivov, E. V. Malisova & E. A. Popova

Authors
  1. M. A. Krivov
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  2. E. V. Malisova
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  3. E. A. Popova
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 71–77, September, 1977.

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Krivov, M.A., Malisova, E.V. & Popova, E.A. Selection of the model of an impurity energy spectrum of a semiconductor by the method of optimizing the parameters of the neutrality equation. Soviet Physics Journal 20, 1176–1180 (1977). https://doi.org/10.1007/BF00897124

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  • DOI: https://doi.org/10.1007/BF00897124

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