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Switching with memory in metal-(Vanadium-molybdenum glass)-metal structures

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

The temperature dependences of the dc and ac (102−2·104 Hz) conductivity, the dielectric constant, and the coefficient of dielectric losses were measured for four compositions of glasses in the system V2O5-MoO3-CaO. The metal-(vanadium-molybdenum glass)-metal structures exhibit switching with memory in the range 90 ≤ T ≤ 500 K. The switching parameters virtually do not depend on the temperature. For some samples an S-shaped section with negative differential resistance is observed on the volt-ampere characteristic (VAC) in the conducting state at temperatures T < 150 K.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 83–87, January, 1989.

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Kalygina, V.M., Gaman, V.I. & Modebadze, O.E. Switching with memory in metal-(Vanadium-molybdenum glass)-metal structures. Soviet Physics Journal 32, 70–73 (1989). https://doi.org/10.1007/BF00896739

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  • DOI: https://doi.org/10.1007/BF00896739

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