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Acoustomagnetoelectric effect in unipolar semiconductors with a nonstandard band structure

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Abstract

An analysis is made of the acoustomagnetoelectric effect in unipolar semiconductors with the Kane dispersion law of electrons. Expressions are obtained for the acoustomagnetoelectric field in the presence of strong and weak external fields. It is shown that the effect can appear even if the relaxation time is independent of the carrier energy.

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Authors and Affiliations

  1. Institute of Electronic Technology, Moscow

    V. A. Ledov

Authors
  1. V. A. Ledov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 65–67, December, 1980.

The author is grateful to É. M. Epshtein for formulating the problem and discussing the results.

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Ledov, V.A. Acoustomagnetoelectric effect in unipolar semiconductors with a nonstandard band structure. Soviet Physics Journal 23, 1040–1042 (1980). https://doi.org/10.1007/BF00896453

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  • DOI: https://doi.org/10.1007/BF00896453

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