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Electrophysical characteristics of epitaxial cadmium telluride films

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Abstract

Equilibrium electrophysical characteristics of epitaxial CdTe films grown by the thermal screen method and the quasiclosed volume method are investigated. It is established that the films in both cases are semiconductors with inhomogeneous potential relief of the band to whose formation the main contribution is from barriers on the boundaries of the growth patterns. It is shown that jump conductivity with a variable jump length due to inhomogeneity of the potential relief of the bands and the high states density at the Fermi level is observed in CdTe films synthesized by the quasiclosed volume method for relatively high temperatures.

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Authors and Affiliations

  1. Lensovet Leningrad Technological Institute, USSR

    A. P. Belyaev, V. P. Rubets & I. P. Kalinkin

Authors
  1. A. P. Belyaev
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  2. V. P. Rubets
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  3. I. P. Kalinkin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 72–76, March, 1990.

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Belyaev, A.P., Rubets, V.P. & Kalinkin, I.P. Electrophysical characteristics of epitaxial cadmium telluride films. Soviet Physics Journal 33, 263–266 (1990). https://doi.org/10.1007/BF00895966

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  • DOI: https://doi.org/10.1007/BF00895966

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