Soviet Physics Journal

, Volume 30, Issue 8, pp 702–706 | Cite as

Effect of copper impurity on the edge emission of ZnTe crystals

  • I. K. Andronik
  • V. S. Vavilov
  • Vu Zoan Mien
  • P. G. Mikhalash
  • M. V. Chukichev
Physics of Semiconductors and Dielectrics


The results are given of studies on the edge emission of undoped and copperdoped ZnTe crystals in the temprature range 4.2–300‡K. The copper impurity has been found to increase the intensity of the principal edge emission band substantially. Analysis of the structure of this emission band indicated that a temprature below 160‡K the main role is played by the emission from excitons that are most probably bound in CuZn and LiZn centers while at higher temperatures it is played by emission during the transition of free electrons to these centers. An appreciable role is played over the entire range of temperatures by emission from free electrons with an energy of 13 MeV. The luminescence quenching energy below 160 K has a value of 7 MeV (the binding energy of a bound exciton) and at higher temperatures it is 78 MeV.


Copper Binding Energy Entire Range Free Electron Emission Band 
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Copyright information

© Plenum Publishing Corporation 1988

Authors and Affiliations

  • I. K. Andronik
    • 1
  • V. S. Vavilov
    • 1
  • Vu Zoan Mien
    • 1
  • P. G. Mikhalash
    • 1
  • M. V. Chukichev
    • 1
  1. 1.V. I. Lenin State UniversityKishinev

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