Abstract
The diffusion of Si atoms from a silicon substrate through a layer of nickel monosilicide into a Ni film is investigated in the temperature interval 470–670°K by the method of radioactive isotopes. The distribution profile of Si in NiSi and Ni is derived. The GB-diffusion parameters of Si in NiSi are determined. It is shown that when T>570°K there is an increase in the thickness of the initial NiSi layer, and a kink appears on the in D=f(1/T) curve. The associated change in the activation energy of diffusion from 0.43 (470–570°K) to 0.72 eV (570–670°K) is explained by the formation of Ni-Si and Si-O type complexes. The diffusion of silicon atoms accompanied by complex-formation processes determines the evolution of the resistivity of the Ni-NiSi-Si contact.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Literature cited
A. E. Gershinskii, A. V. Rzhanov, and E. I. Cherepov, Mikroelektronika,11, 83 (1982).
A. I. Rodionov, A. E. Erofeeva, and V. A. Uskov, Proceedings of the IV-th All-Union Conference on the Physicochemical Principles of the Doping of Semiconductor Materials [in Russian] (1979).
V. A. Uskov, E. A. Erofeeva, and N. A. Lineva, in: The Doping of Semiconductors [in Russian], Nauka, Moscow (1982), pp. 110–114.
D. Pout, K. Tu, and D. M. Meier (eds.), Thin Films. Mutual Diffusion and Reaction [Russian translation], Mir, Moscow (1982).
M. I. Bakulina, T. M. Goncharova, et al., Elektron. Tekh., Ser. 2, No. 8, 86 (1974).
Yu. A. Pimenov, Yu. B. Stepanov, and A. I. Kadyshev, Obz. Elektron. Tekh., Ser. 5, No. 2, 3 (1983).
N. A. Lineva, S. V. Sakharov, et al., Izv. Akad. Nauk SSSR, Neorgan. Mater.,15, 731 (1979).
K. L. Klohn and L. Wandinger, J. Electrochem. Soc.,116, 507 (1969).
B. I. Boltaks, Diffusion in Semiconductors [in Russian], Nauka, Moscow (1969).
V. V. Vas'kin and V. A. Uskov, Fiz. Tverd. Tela,11, 1763 (1969).
F. Kreger, The Chemistry of Imperfect Crystals [Russian translation], Mir, Moscow (1969).
A. V. Uskov, in: The Properties of Doped Semiconductors [in Russian], Nauka, Moscow (1977).
Author information
Authors and Affiliations
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 78–83, March, 1985.
Rights and permissions
About this article
Cite this article
Rodionov, A.I., Uskov, V.A. Low-temperature diffusion of silicon atoms in the nickel-nickel silicide-silicon system. Soviet Physics Journal 28, 242–245 (1985). https://doi.org/10.1007/BF00895915
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF00895915