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Ion doping of gallium arsenide

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Soviet Physics Journal Aims and scope

Conclusion

The survey presented shows that despite the intensive study of the physical problems of ion implantation in GaAs, there is still a number of questions to investigate. Among them are: The role of anomalous diffusion and channeling in the formation of concentration profiles, the anomalous diffusion mechanism, the influence of radiation defects and residual impurities as well as the form of the coating, the interaction between impurities and defects under ion implantation, and the identification of radiation defects, A further study of the above-mentioned questions will permit extension of the application of the ion implantation method to obtain GaAs semiconductor instruments and realization of still unused possibilities of this powerful method of modern semiconductor technology.

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Literature cited

  1. V. M. Zelevinskaya, G. A. Kachurin, and L. S. Smirnov, Mikroelektronika,2, 252 (1973).

    Google Scholar 

  2. P. L. Degen, Phys. Status Solidi (a),76, 9 (1973).

    Google Scholar 

  3. P. L. F. Hemment, in: Appl. Ion Beams to Materials, London-Bristol (1976), p. 44.

  4. F. H. Eisen, Radiat. Eff.,9, 235 (1971).

    Google Scholar 

  5. E. I. Zorin. P. V. Pavlov, and D. I. Tetel'baum, Ion Doping of Semiconductors [in Russian], Énergiya, Moscow (1975).

    Google Scholar 

  6. L. S. Smirnov (editor), Physical Processes in Irradiated Semiconductors [in Russian], Nauka, Sib. Otd., Novosibirsk (1977).

    Google Scholar 

  7. A. Lidow et al., Appl. Phys. Lett.,32, 15 (1978).

    Google Scholar 

  8. D. H. Lee and R. M. Malbon, Appl. Phys. Lett.,30, 327 (1977).

    Google Scholar 

  9. J. L. Whitton and G. R. Bellavance, Radiat. Eff.,9, 127 (1971).

    Google Scholar 

  10. J. L. Whitton and C. Carter, in: Proc. Conf. on Atomic Collision Phenomena in Solids, Amsterdam (1970), p. 615.

  11. A. A. Gavrilov et al., Fiz. Tekh. Poluprovodn.,9, 1627 (1975).

    Google Scholar 

  12. W. H. Weisenberger, S. T. Picraux, and F. L. Vook, Radiat. Eff.,9, 121 (1971).

    Google Scholar 

  13. S. J. Mazey and R. S. Nelson, Radiat. Eff.,1, 229 (1969).

    Google Scholar 

  14. E. D. Wolf and R. G. Hunsperger, Appl. Phys. Lett.,16, 526 (1970).

    Google Scholar 

  15. R. Bicknell et al., Phys. Status Solidi (a),12, K9 (1972).

    Google Scholar 

  16. G. A. Shifrin and R. G. Hunsberger, Appl. Phys. Lett.,17, 274 (1970).

    Google Scholar 

  17. B. A. Bobylev et al., in: Modulation Spectroscopy of Semiconductors and Dielectrics [in Russian], Tbilisi (1975), p. 86.

  18. J. A. Borders, Appl. Phys. Lett.,18, 16 (1971).

    Google Scholar 

  19. K. Gamo et al., Jpn. J. Appl. Phys.,10, 1118 (1971).

    Google Scholar 

  20. D. E. Davies et al., Appl. Phys. Lett.,23, 615 (1973).

    Google Scholar 

  21. T. Hanazawa et al., Jpn. J. Appl. Phys.,13, 1487 (1974).

    Google Scholar 

  22. W. H. Weisenberger et al., Radiat. Eff.,9, 121 (1971).

    Google Scholar 

  23. W. A. Grant and J. N. Bernah, Radiat. Eff.,17, 13 (1973).

    Google Scholar 

  24. A. W. Tinsley et al., Radiat. Eff.,23, 165 (1974).

    Google Scholar 

  25. W. J. Anderson and Y. S. Park. J. Appl. Phys.,49, 4568 (1978).

    Google Scholar 

  26. J. S. Harris, in: I. Ruge and J. Graul (editors), Ion Implantation in Semiconductors, Springer-Verlag, Berlin (1971), p. 157.

    Google Scholar 

  27. F. L. Vook and S. T. Picraux, in: Ibid., p. 141.

    Google Scholar 

  28. J. M. Woodcock et al., Solid State Electron.,18, 267 (1975).

    Google Scholar 

  29. Aoki Kazunori et al., Jpn. J. Appl. Phys.,15, 405 (1976).

    Google Scholar 

  30. A. A. Gavrilov et al., Fiz. Tekh. Poluprovodn.,10, 1425 (1976).

    Google Scholar 

  31. A. I. Gerasimov et al., in: Abstracts of Reports, All-Union Conf. on Physics of A3B5 Compounds [in Russian], Leningrad (1978), p. 34.

  32. A. I. Gerasimov, in: Abstracts of Reports, Fourth All-Union Congress on Gallium Arsenide Investigation [in Russian], Tomsk (1978), p. 137.

  33. S. Y. Chiang and G. L. Pearson, J. Appl. Phys.,46, 2986 (1975).

    Google Scholar 

  34. R. G. Hunsperger et al., Radiat. Eff.,9, 133 (1971).

    Google Scholar 

  35. Yu Phill Won and Y. S. Park, Appl. Phys. Lett.,30, 14 (1977).

    Google Scholar 

  36. N. N. Gerasimenko et al., in: Physical Principles of Ion-Beam Doping [in Russian], Gorkii (1972), p. 215.

  37. V. M. Zelevinskaya et al., Fiz. Tekh. Poluprovodn.,4, 317 (1970).

    Google Scholar 

  38. Y. Kato et al., J. Appl. Phys.,45, 1044 (1974).

    Google Scholar 

  39. B. R. Pruniaux et al., in: Ruge and Graul, op. cit., p. 212.

  40. B. J. Sealy, J. Mater. Sci.,10, 683 (1975).

    Google Scholar 

  41. R. E. Whan and G. W. Arnold, Appl. Phys. Lett.,17, 378 (1970).

    Google Scholar 

  42. A. U. Kachara et al., J. Appl. Phys.,47, 4209 (1976).

    Google Scholar 

  43. R. G. Hunsperger and O. J. Marsh, Jpn. J. Electrochem. Soc.,116, 488 (1969).

    Google Scholar 

  44. V. M. Zelevinskaya et al., Fiz. Tekh. Poluprovodn.,4, 1784 (1970).

    Google Scholar 

  45. M. A. Littlejohn et al., Radiat. Eff.,10, 185 (1971).

    Google Scholar 

  46. Y. Yuba et al., Jpn. J. Appl. Phys.,13, 641 (1974).

    Google Scholar 

  47. A. A. Gavrilov et al., Fiz. Tekh. Poluprovodn.,8, 2236 (1974).

    Google Scholar 

  48. R. G. Hunsperger et al., J. Appl. Phys.,43, 1318 (1972).

    Google Scholar 

  49. M. V. McLevige et al., J. Appl. Phys.,48, 3342 (1977).

    Google Scholar 

  50. P. K. Chatterjee and B. G. Streetman, Solid State Electron.,20, 305 (1977).

    Google Scholar 

  51. F. J. Leonberger et al., Appl. Phys. Lett.,28, 616 (1976).

    Google Scholar 

  52. R. G. Hunsberger et al., Appl. Phys. Lett.,9, 295 (1968).

    Google Scholar 

  53. T. Itoh and V. Kushiro, J. Appl. Phys.,42, 5120 (1971).

    Google Scholar 

  54. D. E. Davies et al., J. Electrochem. Soc.,122, 1374 (1975).

    Google Scholar 

  55. J. P. Donnely et al., Appl. Phys. Lett.,27, No. 1, 41 (1975).

    Google Scholar 

  56. J. R. Brawn and W. A. Grant, in: Appl. Ion Beams to Mater., London-Bristol (1976), p. 59.

  57. J. M. Woodcock et al., Solid State Electron.,18, 267 (1975).

    Google Scholar 

  58. F. H. Eisen et al., Solid State Electron.,20, 219 (1977).

    Google Scholar 

  59. T. Inada et al., J. Appl. Phys.,49, 4571 (1978).

    Google Scholar 

  60. F. H. Eisen et al., in: Appl. Ion Beams to Mater., London-Bristol (1976), p. 64.

  61. A. Lidow et al., Appl. Phys. Lett.,31, 158 (1977).

    Google Scholar 

  62. A. A. Immorlica and F. H. Eisen, Appl. Phys. Lett.,29, 94 (1976).

    Google Scholar 

  63. J. F. Gibbons and R. E. Tremain, Appl. Phys. Lett.,26, 199 (1975).

    Google Scholar 

  64. R. D. Pashley and B. Welch, Solid State Electron.,18, 977 (1975).

    Google Scholar 

  65. B. J. Sealy et al., in: Appl. Ion Beams to Mater., London-Bristol (1976), p. 69.

  66. J. M. Woodcock et al., Acta Electron.,19, 151 (1976).

    Google Scholar 

  67. V. M. Zelevinskaya and G. A. Kachurin, Fiz. Tekh. Poluprovodn.,5, 1659 (1971).

    Google Scholar 

  68. V. M. Zelevinskaya et al., Izv. Akad. Nauk SSSR, Neorg. Mater.,9, 1316 (1973).

    Google Scholar 

  69. J. D. Sansbury and J. F. Gibbons, Radiat. Eff.,6, 269 (1970).

    Google Scholar 

  70. P. N. Favennec et al., Solid State Electron.,21, 705 (1978).

    Google Scholar 

  71. V. M. Zelevinskaya et al., Fiz. Tekh. Poluprovodn.,9, 1627 (1975).

    Google Scholar 

  72. J. D. Sansbury and J. F. Gibbons, Appl. Phys. Lett.,14, 311 (1969).

    Google Scholar 

  73. T. Nozaki, Jpn. J. Appl. Phys.,15, 1991 (1976).

    Google Scholar 

  74. V. M. Zelevinskaya and G. A. Kachurin, Fiz. Tekh. Poluprovodn.,10, 167 (1976).

    Google Scholar 

  75. Yu. N. Shutov et al., in: Abstracts of Reports. Fourth All-Union Congress on Gallium Arsenide Investigation [in Russian], Tomsk (1978), p. 135.

  76. B. M. Goryunov et al., in: Gallium Arsenide [in Russian], No. 4, Tomsk Gos. Univ., (1974), p. 102.

  77. T. J. Harris et al., Electron. Lett.,12, 664 (1976).

    Google Scholar 

  78. Yu. A. Danilov et al., in: Abstracts of Reports, Third All-Union Congress on Structure Defects in Semiconductors [in Russian], Vol. 11, Novosibirsk (1978), p. 201.

    Google Scholar 

  79. V. P. Belevskii et al., Prib. Tekh. Eksp., No. 6, 203 (1970).

    Google Scholar 

  80. N. B. Pridachin et al., in: Gallium Arsenide [in Russian], No. 3, Tomsk Gos. Univ., (1970), p. 275.

  81. D. H. Lee et al., Electron. Lett.,11, 9 (1975).

    Google Scholar 

  82. G. A. Kachurin, N. B. Pridachin, et al., Elektron. Tekh., Ser. 2, No. 1 (65), 40 (1972).

    Google Scholar 

  83. A. A. Gavrilov et al., Mikroelektronika,4, 460 (1975).

    Google Scholar 

  84. A. A. Gavrilov et al., in: Structure Defects in Semiconductors [in Russian], IFP, Sib. Otd. Akad. Nauk SSSR (1973), p. 285.

  85. M. K. Barnoski et al., Appl. Phys. Lett.,24, 12 (1974).

    Google Scholar 

  86. R. G. Hunsperger and N. Hirsch, Electron. Lett.,9, 577 (1973).

    Google Scholar 

  87. J. A. Higgins et al., Electron. Lett.,12, 17 (1976).

    Google Scholar 

  88. T. Nozaki and K. Ohata, Jpn. J. Appl. Phys., Suppl.,16-1, 111 (1977).

    Google Scholar 

  89. J. A. Higgins et al., IEEE Trans.,ED-25, 587 (1978).

    Google Scholar 

  90. O. Kellehi et al., IEEE Trans.,ED-24, 1129 (1977).

    Google Scholar 

  91. T. Mizutani et al., Solid State Electron.,20, 443 (1977).

    Google Scholar 

  92. P. N. Favennec, J. Appl. Phys.,47, 2532 (1976).

    Google Scholar 

  93. A. G. Foyt et al., Solid State Electron.,12, 209 (1969).

    Google Scholar 

  94. G. O. Bozler et al., Appl. Phys. Lett.,29, 698 (1976).

    Google Scholar 

  95. G. A. Kachurin et al., Fiz. Tekh. Poluprovodn.,9, 1428 (1975).

    Google Scholar 

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Authors and Affiliations

  1. Physicotechnical Research Institute at the N. I. Lobachevskii State University, Gorki

    P. V. Pavlov, E. I. Zorin & D. I. Tetel'baum

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  1. P. V. Pavlov
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  2. E. I. Zorin
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  3. D. I. Tetel'baum
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 76–90, January, 1980.

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Pavlov, P.V., Zorin, E.I. & Tetel'baum, D.I. Ion doping of gallium arsenide. Soviet Physics Journal 23, 55–66 (1980). https://doi.org/10.1007/BF00895766

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