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Tunneling migrational polarization in dielectrics

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Abstract

The effect of tunneling accompanying volume-charge relaxation is analyzed. The Fokker-Planck equation, in which tunneling transitions are taken into account in the diffusion coefficient and the mobility in the quasiclassical approximation for rectangular potential barriers, is derived from the condition of transitions of the relaxation oscillators between neighboring states. The distribution of the volume charge was found by solving simultaneously the Fokker-Planck and Poisson equations by the small-parameter method with auxiliary contacts on the electrodes. The region of non-Debye dispersion was determined by taking into account the tunneling of relaxation oscillators. Formulas for calculating the complex dielectric constant were derived.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 71–75, November, 1990.

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Medvedev, V.Y., Tonkonogov, M.P. Tunneling migrational polarization in dielectrics. Soviet Physics Journal 33, 958–962 (1990). https://doi.org/10.1007/BF00895635

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  • DOI: https://doi.org/10.1007/BF00895635

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