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Carrier transport and attendant fluctuations in variable-gap semiconductors

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Abstract

An analysis is made of the characteristic features of carrier transport and fluctuation effects in variable-gap semiconductors owing to variations in the gap width. It is noted that the most effective contribution to the fluctuations comes from the narrow-gap portion of a semiconductor of length (kT/ΔEg)·L, where ΔEg is the increment in the gap width over the crystal length L.

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Authors and Affiliations

  1. Novgorod Polytechnic Institute, USSR

    S. A. Sabel'nikov & L. P. Karba

Authors
  1. S. A. Sabel'nikov
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  2. L. P. Karba
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Np. 11, pp. 72–78, November, 1979.

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Sabel'nikov, S.A., Karba, L.P. Carrier transport and attendant fluctuations in variable-gap semiconductors. Soviet Physics Journal 22, 1184–1188 (1979). https://doi.org/10.1007/BF00894969

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  • DOI: https://doi.org/10.1007/BF00894969

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