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Surface region of the space charge in a semiconductor with an arbitrary energy spectrum of the trapped states

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Abstract

The screening of the electric field in a semiconductor with an arbitrary energy spectrum of the trapped centers is discussed in this paper. Expressions which describe the voltage dependence of the capacitance are derived on the basis of the solution of Poisson's equation. An analysis is performed of the particular cases of a monoenergetic center and a quasicontinuous spectrum of charge localization centers with a constant and an exponential energy distribution density, and the possibility is noted of determining the parameters of this distribution by means of the processing of experimental results according to the formulas derived in this paper.

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Literature cited

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Authors and Affiliations

  1. Lenin Comsomol Voronezh State University, Voronezh

    V. D. Linnik, V. F. Synorov & B. I. Sysoev

Authors
  1. V. D. Linnik
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  2. V. F. Synorov
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  3. B. I. Sysoev
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 54–58, November, 1979.

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Linnik, V.D., Synorov, V.F. & Sysoev, B.I. Surface region of the space charge in a semiconductor with an arbitrary energy spectrum of the trapped states. Soviet Physics Journal 22, 1169–1172 (1979). https://doi.org/10.1007/BF00894966

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  • DOI: https://doi.org/10.1007/BF00894966

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