Abstract
In a study of the longitudinal magnetoresistance as a function of the magnetic field in samples of n-type Ge of various thicknesses at 300°K and 77°K, the surface of the samples was oriented parallel to the (001) plane. The directions of the current and the magnetic field were along either the <100> direction or the <110> direction. As the thickness of the samples was reduced, regardless of the orientation of the current and the magnetic field with respect to the crystallographic directions, a decrease was observed in the magnetoresistance over the entire range of magnetic fields studied, 1–280 kOe. The experimental results are attributed to a screening-length size effect and to “sliding” orbits in the enriched surface layers, which lead to an increase in the electron mobility in a strong magnetic field.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 110–115, May, 1975.
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Zot'ev, B.P., Skubnevskii, É.V. & Dudarev, A.T. Size effect of the longitudinal magnetoresistance of thin films of n- type Ge. Soviet Physics Journal 18, 691–694 (1975). https://doi.org/10.1007/BF00894006
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DOI: https://doi.org/10.1007/BF00894006