Abstract
The initial surface potential and the charge captured in fast surface states as a function of surface potential are measured for germanium surfaces oriented in the planes (111), (110), and (100) by the method of field effect on a large sinusoidal signal. Before measurements the specimens were oxidized in air at temperatures of 400, 500, and 600°C. A dependence of the quantities measured upon crystallographic orientation of the surface was observed. The effect of a transverse electric field on the initial surface potential bias was studied.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 88–92, January, 1973.
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Vyatkin, A.P., Shirokov, A.A. Crystallographic anisotropy in the surface properties of oxidized germanium. Soviet Physics Journal 16, 68–71 (1973). https://doi.org/10.1007/BF00893344
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DOI: https://doi.org/10.1007/BF00893344