Abstract
The effects of irradiation by fast neutrons on gallium arsenide crystals with different degrees of initial perfection is investigated. It is shown that for relatively perfect, specially non-doped n-type crystals the degree of damage K is weakly dependent on the integrated radiative flux up to some critical flux determined by the initial current carrier concentration. The decrease in the rate of carrier removal in crystals with an elevated concentration of residual defects is due to the participation of the latter in the kinetics of defect formation. The initial rates of carrier removal are obtained in crystals grown by different methods.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 47–51, January, 1973.
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Stel'makh, V.F., Tkachev, V.D. Variation of electron concentration in gallium arsenide due to irradiation by fast neutrons. Soviet Physics Journal 16, 33–37 (1973). https://doi.org/10.1007/BF00893336
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DOI: https://doi.org/10.1007/BF00893336