Skip to main content
SpringerLink
Log in

Properties of metal-zinc oxide contacts

  • Published:
Soviet Physics Journal Aims and scope

Abstract

The known methods of forming surface barrier structures on zinc oxide are analyzed. The dependence of surface and contact properties of zinc oxide on thermal processing temperature in air and vacuum is studied. It is established that the contact may become rectifying or ohmic depending on the character of surface processing. It is shown that the major factor determining the properties of zinc-oxide contacts is the state of the semiconductor surface. The effect of moisture on the properties of such contact is studied.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Literature cited

  1. S. A. Medvedev, ed., Physics and Chemistry of AIIBVI Compounds [Russian translation], Mir, Moscow (1970).

    Google Scholar 

  2. C. A. Mead, Phys. Lett.,18, No. 3, 218 (1965).

    Google Scholar 

  3. R. C. Neville and C. A. Mead, J. Appl. Phys.,41, No. 9, 3795 (1970).

    Google Scholar 

  4. K. Robert and Swank, Phys. Rev.,153, No. 3 (1967).

  5. I. K. Vereshchagin, Electroluminescence of Crystals [in Russian], Nauka, Moscow (1974), pp. 132–136.

    Google Scholar 

  6. Z. I. Kir'yashkina, A. M. Sverdlova, and M. V. Prokhozheva, Semiconductor Physics and Electronics, Vol. 6 [in Russian], Saratov Univ. (1986).

  7. K. Meanare and A. G. Mesnard, Phys. Status Solidi,32, K159-K162 (1969).

    Google Scholar 

  8. R. A. Rabadanov, S. A. Semiletov, and Z. A. Magomedov, Fiz. Tverd. Tela, (Leningrad) 12, No. 5, 1431 (1970).

    Google Scholar 

  9. N. B. Henney, ed., Semiconductors [Russian translation], Inostran. Lit., Moscow (1962).

    Google Scholar 

  10. S. G. Madoyan and M. K. Guseikhanov, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 6, 80 (1976).

    Google Scholar 

  11. C. J. Chang, J. K. Eang, and S. M. Sze, Solid State Electron., No. 7, 541–550 (1971).

    Google Scholar 

  12. S. G. Morrison, in: Catalysis, Electronic Phenomena [Russian translation], Inostran. Lit., Moscow (1958).

    Google Scholar 

  13. V. I. Boltaks, Diffusion and Point Defects in Semiconductors [in Russian], Nauka, Leningrad (1972).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. V. I. Lenin Dagestan State University, USSR

    R. A. Rabadanov, M. K. Guseikhanov, I. Sh. Aliev & S. A. Semiletov

Authors
  1. R. A. Rabadanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. K. Guseikhanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. I. Sh. Aliev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. A. Semiletov
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 72–75, June, 1981.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Rabadanov, R.A., Guseikhanov, M.K., Aliev, I.S. et al. Properties of metal-zinc oxide contacts. Soviet Physics Journal 24, 548–551 (1981). https://doi.org/10.1007/BF00892955

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00892955

Keywords

Search

Navigation