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Charge relaxation and instability in barrier layers

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Abstract

It is shown experimentally that the order of magnitude of the relaxation time of a physical barrier layer is determined by the product of the Maxwell relaxation time and the corresponding exponent. The experiments deal with dielectric dispersion in ferrites and nickel oxide. It is shown that near the relaxation maximum these inhomogeneous semiconductors can be considered as quasihomogeneous. A new treatment of a number of instabilities in barrier layers is presented: low frequency voltage fluctuations in p—n junctions and Schottky barriers, barrier instability, etc.

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Literature cited

  1. L. A. Kuznetsova and P. T. Oreshkin, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 2, 100 (1968).

    Google Scholar 

  2. B. M. Sokolov and P. T. Oreshkin, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 2, 155 (1969).

    Google Scholar 

  3. P. T. Oreshkin, B. K. Starchenkov, and L. A. Kuznetsova, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 10, 22 (1968).

    Google Scholar 

  4. P. T. Oreshkin, Semiconductor and Dielectric Physics [in Russian], Vysshaya Shkola, Moscow (1977).

    Google Scholar 

  5. P. T. Oreshkin, Electrical Conductivity of Refractory Materials and Relaxation Phenomena in Barrier Layers [in Russian], Metallurgiya, Moscow (1965).

    Google Scholar 

  6. Yu. K. Pozhela, Plasma and Current Instabilities in Semiconductors, Nauka, Moscow (1977).

    Google Scholar 

  7. G. F. Kashirin, Author's Abstract, Candidate's Dissertation, Voronezh' (1972).

  8. A. L. Denisov, Semiconductor Physics and Microelectronics, No. 5 [in Russian], Ryazan' (1978), p. 56.

    Google Scholar 

  9. A. G. Golovko, Fiz. Tekh. Poluprovodn, 12, 1842 (1978).

    Google Scholar 

  10. A. G. Golovko, Fiz. Tekh. Poluprovodn, 12, 2386 (1978).

    Google Scholar 

  11. A. G. Golovko and T. D. Shermergor, Fiz. Tekh. Poluprovedn,7, 1353 (1974).

    Google Scholar 

  12. B. S. Muravskii and G. I. Frizen, Fiz. Tekh. Poluprovodn., 13, 1178 (1979).

    Google Scholar 

  13. V. S. Myl'nikov and S. P. Voronin, Fiz. Tekh. Poluprovodn., 13, 370 (1979).

    Google Scholar 

  14. L. A. V'yukov, V. A. Gergel', and A. N. Solyakov, Mikroelectron., 9, 107 (1980).

    Google Scholar 

  15. V. A. Gergel', T. I. Starikova, and Yu. I. Tishin, Mikroelektron., 8, 351 (1979).

    Google Scholar 

  16. A. E. Kaplan, Radiotekhn. Elektron., 9, 1719 (1964).

    Google Scholar 

  17. A. F. Kravchenko and V. Ya. Prints, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 1, 52 (1980).

    Google Scholar 

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Authors and Affiliations

  1. Ryazan' Radio Technical Institute, USSR

    P. T. Oreshkin

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  1. P. T. Oreshkin
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 20–23, June, 1981.

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Oreshkin, P.T. Charge relaxation and instability in barrier layers. Soviet Physics Journal 24, 495–497 (1981). https://doi.org/10.1007/BF00892942

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  • DOI: https://doi.org/10.1007/BF00892942

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