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High-speed s-diodes with GaAs:Fe structure, produced by gas-phase epitaxy

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Abstract

The electrical characteristics of diodes formed of epitaxial layers of gallium arsenide doped with iron during growth from the gas phase are studied. It is shown that these diodes have an s-shaped current-voltage characteristic and can be used as high speed switches with switching times of 10−10 sec.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, USSR

    M. D. Vilisova, G. M. Ikonnikova, O. P. Tolbanov & S. S. Khludkov

Authors
  1. M. D. Vilisova
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  2. G. M. Ikonnikova
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  3. O. P. Tolbanov
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  4. S. S. Khludkov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 3–6, November, 1981.

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Vilisova, M.D., Ikonnikova, G.M., Tolbanov, O.P. et al. High-speed s-diodes with GaAs:Fe structure, produced by gas-phase epitaxy. Soviet Physics Journal 24, 979–982 (1981). https://doi.org/10.1007/BF00892494

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  • DOI: https://doi.org/10.1007/BF00892494

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