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Effect of irradiation with intermediate-energy ions on structure and electrophysical properties of silicon dioxide films in a mos system

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Conclusions

In addition to the well-known advantages, ensuring intensive introduction of ion-beam doping in present-day semiconductor technology, this method allows the principal parameters of MOS systems to be controlled. Implantation is an effective method of low-temperature passivation of SiO2-Si systems. The application of ion-beam doping for controlled charges in the parameters of MOS systems will make it possible to enhance the stability and quality of semiconductor devices and integrated circuits.

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Authors and Affiliations

  1. Ryazan Radiotechnical Institute, USSR

    T. A. Kholomina

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  1. T. A. Kholomina
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The author wishes to express his gratitude to Professor P. T. Oreshkin for participating in the discussion of the work and for his useful remarks.

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 34–39, December, 1978.

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Kholomina, T.A. Effect of irradiation with intermediate-energy ions on structure and electrophysical properties of silicon dioxide films in a mos system. Soviet Physics Journal 21, 1550–1554 (1978). https://doi.org/10.1007/BF00892468

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  • DOI: https://doi.org/10.1007/BF00892468

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