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Growth of GaAs epitaxial layers in the proximity of singular faces at various chlorine and impurity (tellurium) pressures

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Conclusions

From the investigations carried out, therefore, we can draw the following conclusions.

An increase in the impurity (tellurium) content in the vapor phase gives rise to a decrease in the depth of the singular minimum on the (111)A face because of “contamination” of part of the kinks.

The transition to a singular maximum on (111)A at high pressures of chlorine and tellurium is due to an additional growth mechanism associated with the participation of the impurity in nucleation.

No growth-rate maximum was observed to appear on the (001) and (110) faces in the vapor phase under the same conditions.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, USSR

    S. E. Toropov, L. P. Porokhovnichenko & L. G. Lavrent'eva

Authors
  1. S. E. Toropov
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  2. L. P. Porokhovnichenko
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  3. L. G. Lavrent'eva
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 46–50, June, 1983.

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Toropov, S.E., Porokhovnichenko, L.P. & Lavrent'eva, L.G. Growth of GaAs epitaxial layers in the proximity of singular faces at various chlorine and impurity (tellurium) pressures. Soviet Physics Journal 26, 540–543 (1983). https://doi.org/10.1007/BF00891926

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  • DOI: https://doi.org/10.1007/BF00891926

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