Skip to main content
SpringerLink
Log in

Kinetics of capture of tellurium by {111} gallium arsenide faces in the GaAs-AsCl3-H2 system at various supersaturations

  • Physics of Semiconductors and Dielectrics
  • Published:
Soviet Physics Journal Aims and scope

Conclusions

From our investigations it follows that the dependence of the tellurium capture rate on supersaturation in the GaAs(Te)-ASCl3-H2 system can be explained:

  1. a)

    in the region of low supersaturations, on the basis of the surface-diffusion model withλ si λ s0<1 on (111)B andλ si/λ s0>1 on (111)A;

  2. b)

    in the region of high supersaturations, on the basis of a model that takes account of the decrease in the density of sites of impurity-atom incorporation into a step because of contamination of the contamination of the steps with chlorine.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Literature cited

  1. L. G. Lavren'eva, V. A. Moskovskin, V. G. Ivanov, and I. V. Ivonin, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 4, 112 (1982).

    Google Scholar 

  2. L. G. Lavrent'eva and Yu. G. Kataev, in: Gallium Arsenide, No. 2 [in Russian], Izd. Tomsk. Univ., Tomsk (1969), p. 46.

    Google Scholar 

  3. L. G. Lavrent'eva, M. D. Vilisova, V. A. Moskovskin, and S. E. Toropov, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 11, 12 (1982).

    Google Scholar 

  4. L. G. Lavrent'eva, V. G. Ivanov, I. V. Ivonin, V. A. Moskovskin, and S. E. Toropov, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 9, 101 (1982).

    Google Scholar 

  5. A. A. Chernov and S. S. Stoyanov, Kristallografiya,22, 2, 248 (1977).

    Google Scholar 

  6. L. G. Lavrent'eva, L. P. Porokhovnichenko, Yu. G. Kataev, O. V. Ruzaikina, and N. N. Bakin, In: Gallium Arsenide, No. 5 [in Russian], Izd. Tomsk. Univ., Tomsk (1974), p. 88.

    Google Scholar 

  7. L. G. Lavrent'eva, S. E. Toropov, and L. P. Porokhovnichenko, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 11, 18 (1982).

    Google Scholar 

  8. S. E. Toropov, L. P. Porokhovnichenko, and L. G. Lavrent'eva, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 6, 46 (1983).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, USSR

    L. G. Lavrent'eva, M. D. Vilisova & V. A. Moskovkin

Authors
  1. L. G. Lavrent'eva
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. D. Vilisova
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. A. Moskovkin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 42–46, June, 1983.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lavrent'eva, L.G., Vilisova, M.D. & Moskovkin, V.A. Kinetics of capture of tellurium by {111} gallium arsenide faces in the GaAs-AsCl3-H2 system at various supersaturations. Soviet Physics Journal 26, 536–540 (1983). https://doi.org/10.1007/BF00891925

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00891925

Keywords

Search

Navigation