Abstract
The assumption of a constant ratio of the density of free carriers to the total carrier density in the process of electron injection is used to develop a phenomenological model of the accumulation of a space charge by high-energy injection. Use is made of the concept of a quasi-Fermi level in the case of an exponential distribution of trap energies.
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O. B. Evdokimov, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 6, 158 (1975).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 96–98, May, 1980.
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Evdokimov, O.B., Solov'ev, Y.A. Phenomenological model of the accumulation of a space charge by high-energy injection of electrons in high-resistivity materials. Soviet Physics Journal 23, 442–445 (1980). https://doi.org/10.1007/BF00891638
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DOI: https://doi.org/10.1007/BF00891638