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Drag of carriers by photons in narrow-gap semiconductors

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Abstract

The current representing the drag of carriers by photons is calculated for cubic narrow-gap semiconductors allowing for the nonparabolicity and nonsphericity of the valence subbands. A quantitative Kane model is used to obtain a general tensor expression for the photocurrent related to the coefficients representing the nonparabolicity of the light-hole subband and the nonsphericity of the heavy-hole subband. The results are given of a numerical calculation of the principal parameters of the drag current in the form of components of the elementary tensors (as a function of temperature) and of the coefficient representing the nonparabolicity (as a function of the wavelength of the incident light) in the case of narrow-gap Hg1−xCdxTe solid solutions.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk

    V. V. Antonov, A. V. Voitsekhovskii & A. V. Kozyrev

Authors
  1. V. V. Antonov
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  2. A. V. Voitsekhovskii
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  3. A. V. Kozyrev
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 62–66, May, 1980.

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Antonov, V.V., Voitsekhovskii, A.V. & Kozyrev, A.V. Drag of carriers by photons in narrow-gap semiconductors. Soviet Physics Journal 23, 410–414 (1980). https://doi.org/10.1007/BF00891631

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  • DOI: https://doi.org/10.1007/BF00891631

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