Abstract
The results are given of investigation of the dc and ac electrical properties of thin-film metal-insulator-metal structures of capacitor type based on glass of the composition 35% B2O3-15% CaO-20% V2O4-30% V2O5 (wt.%). The glass films were deposited by an explosive method on a glassceramic substrate at t°=80°C. Upper and lower Nichrome electrodes were obtained by thermal evaporation. The influence of annealing on the conductivity and current-voltage characteristics of such structures was investigated. It was found that the current-voltage characteristics before and after annealing are determined in a wide range of temperatures and constant electric fields by contact barriers on the metal-glass-film interface. The ac behavior of the samples at f >102 Hz is due to the bulk properties of the glass film.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 68–73, March, 1981.
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Kalygina, V.M., Kosintsev, V.I., Gaman, V.I. et al. Electrical properties of mim structures based on vanadium-borate glass. Soviet Physics Journal 24, 262–266 (1981). https://doi.org/10.1007/BF00891604
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DOI: https://doi.org/10.1007/BF00891604