Skip to main content
SpringerLink
Log in

Interband absorption in layered semiconductors with a smooth random field

  • Published:
Soviet Physics Journal Aims and scope

Abstract

The effect of a smooth random field on interband absorption is studied in highly anisotropic semiconductors. Such fields can arise because of semimacroscopic defects induced during production and randomly distributed throughout the sample. The calculations are performed using a semiclassical approximation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Literature cited

  1. V. L. Bonch-Bruevich, “Semiclassical theory of particles in a random field,” in: Statistical Physics and the Quantum Theory of Fields [in Russian], Nauka, Moscow (1973).

    Google Scholar 

  2. V. L. Bonch-Bruevich, V. D. Karaivanov, and Ya. G. Proikova, Phys. Stat. Solidi B,96, 271 (1979).

    Google Scholar 

Download references

Authors
  1. T. G. Lalaeva
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 45–47, September, 1981.

We wish to thank V. L. Bonch-Bruevich for discussions of these results and his constant attention to the work reported here.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lalaeva, T.G. Interband absorption in layered semiconductors with a smooth random field. Soviet Physics Journal 24, 821–823 (1981). https://doi.org/10.1007/BF00891327

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00891327

Keywords

Search

Navigation