Abstract
The electrical parameters of epitaxial layers of n-type GaAs and GaP were determined by graphical analysis of the temperature dependence of the Hall coefficient with the help of the neutrality condition. The method is developed for application to both shallow and deep impurity levels.
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Semiconductors in Science and Technology [in Russian], Vol. 2, Leningrad (1958), p. 600.
J. S. Blakemore, Semiconductor Statistics, Pergamon (1962).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 21–26, October, 1976.
It is a genuine pleasure for the author to thank D. N. Nasledov and O. V. Emel'yanenko for interest and attention they have accorded this work, and R. K. Rad for supplying the gallium phosphide samples.
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Nedeoglo, D.D. Graphical method for determining the electrical parameters of epitaxial layers of n-type gallium arsenide and phosphide. Soviet Physics Journal 19, 1254–1258 (1976). https://doi.org/10.1007/BF00891189
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DOI: https://doi.org/10.1007/BF00891189