Abstract
The polarization properties of multilayer metal/silicon nitride/silicon dioxide/silicon structures have been studied. The dependence of the trapped charge in the double-layer dielectric on the magnitude and duration of the polarizing and depolarizing pulses and on the temperature is examined.
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Translated from Izvestiya Uchebnykh Zavedenii, Fizika, No. 4, pp. 46–50, April, 1973.
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Aleinikov, N.M., Rovinskii, A.P., Synorov, V.F. et al. Some properties of mis structures with a double-layer dielectric. Soviet Physics Journal 16, 479–482 (1973). https://doi.org/10.1007/BF00890829
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DOI: https://doi.org/10.1007/BF00890829