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Electrophysical properties of ionic alloys of GaAs obtained by implanting Zn+ (150 keV) with subsequent annealing at 500–1000°C

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Abstract

A study is made of the electrophysical properties (Ns, μeff) of ionic alloys of GaAs obtained by implanting 150-keV Zn ions at 20 and 300°C. The ion dose D=5·1013–1016 ions/cm2; the alloys were subsequently annealed for 10 min in an H2 atmosphere with temperatures in the range 500–1000°C. The optimal parameters of the ionic alloys are obtained for Ti=300°C and Ta=700°C. Thermal acceptance of the GaAs under a SiO2 film (d≃0.2–0.3 μm) is observed for Ta>700°C. The limiting concentration of thermal acceptors Ns(TA)≃3·1013 cm−2) for T=1000°C and t=10 min.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    B. S. Azikov, V. N. Brudnyi, I. V. Kamenskaya, M. A. Krivov & L. L. Shirokov

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  1. B. S. Azikov
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  2. V. N. Brudnyi
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  3. I. V. Kamenskaya
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  4. M. A. Krivov
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  5. L. L. Shirokov
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 22–26, March, 1979.

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Azikov, B.S., Brudnyi, V.N., Kamenskaya, I.V. et al. Electrophysical properties of ionic alloys of GaAs obtained by implanting Zn+ (150 keV) with subsequent annealing at 500–1000°C. Soviet Physics Journal 22, 240–244 (1979). https://doi.org/10.1007/BF00889853

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  • DOI: https://doi.org/10.1007/BF00889853

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