Abstract
The Compton profiles of C, Si, and Ge are calculated for free atoms, and also taking into account their valence states in crystals. In order to obtain the distribution functions of the electrons with respect to momentum, a study is made of generalized hydrogen-like analytic orbitals. It is shown that the excitation of the electrons into the valence state leads to decrease of the Compton profiles and to the best agreement with their measured values.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 38–41, January, 1975.
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Kuplyauskis, Z.I., Yakimavichyus, I.A. Investigation of the Compton profiles for C, Si, and Ge. Soviet Physics Journal 18, 31–33 (1975). https://doi.org/10.1007/BF00889803
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DOI: https://doi.org/10.1007/BF00889803