Skip to main content
SpringerLink
Log in

Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65)

  • Contributed Papers
  • Published:
Applied physics Aims and scope Submit manuscript

Abstract

Nitrogen ions were implanted in GaAs1−xPx (x=0.4; 0.65) at room temperature at various doses from 5×1012 cm−2 to 5×1015 cm−2 and annealed at temperatures from 600°C up to 950°C using a sputtered SiO2 encapsulation to investigate the possibility of creating isoelectronic traps by ion implantation. Photoluminescence and channeling measurements were performed to characterize implanted layers. The effects of damage induced by optically inactive neon ion implantation on photoluminescence spectrum were also investigated. By channeling measurements it was found that damage induced by nitrogen implantation is removed by annealing at 800°C. A nitrogen induced emission intensity comparable to the intensity of band gap emission for unimplanted material was observed for implanted GaAs0.6P0.4 after annealing at 850°C, while an enhancement of the emission intensity by a factor of 180 as compared with an unimplanted material was observed for implanted GaAs0.35P0.65 after annealing at 950°C. An anomalous diffusion of nitrogen atoms was found for implanted GaAs0.6P0.4 after annealing at and above 900°C.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. D.G. Thomas, J.J. Hopfield, C.J. Forsch: Phys. Rev. Lett.15, 857 (1965)

    Article  ADS  Google Scholar 

  2. D.G. Thomas, J.J. Hopfield: Phys. Rev.150, 680 (1966)

    Article  ADS  Google Scholar 

  3. F.A. Trumbore, M. Gershenzon, D.G. Thomas: Appl. Phys. Lett.9, 4 (1966)

    Article  Google Scholar 

  4. J.J. Hopfield, D.G. Thomas, R.T. Lynch: Phys. Rev. Lett.17, 312 (1966)

    Article  ADS  Google Scholar 

  5. J.D. Cuthbert, D.G. Thomas: Phys. Rev.154, 763 (1967)

    Article  ADS  Google Scholar 

  6. P.J. Dean: J. Lumin.7, 51 (1973)

    Article  Google Scholar 

  7. R.A. Logan, H.G. White, W. Wiegmann: Solid-State Electron.14, 55 (1971)

    Article  Google Scholar 

  8. J.L. Merz, L.C. Feldman, E.A. Sadowski: Radiat. Eff.6, 285 (1970)

    Google Scholar 

  9. L.C. Feldman, W.W. Augustyniak, J.L. Merz: Radiat. Eff.6, 293 (1970)

    Google Scholar 

  10. J.L. Merz, L.C. Feldman, D.W. Mingay, W.M. Augustyniak: InIon Implantation in Semiconductors, ed. by I. Ruge and J. Graul (Springer, Berlin, Heidelberg, New York 1971) p. 182

    Google Scholar 

  11. J.L. Merz, E.A. Sadowski, J.W. Rodgers: Solid State Commun.9, 1037 (1971)

    Article  Google Scholar 

  12. J.S. Harris, F.H. Eisen, B. Welch, J.D. Haskell, R.D. Pashley, J.W. Mayer: Appl. Phys. Lett.21, 601 (1972)

    Article  Google Scholar 

  13. M. Takai, K. Gamo, K. Masuda, S. Namba: Jpn. J. Appl. Phys.12, 1926 (1973)

    Article  Google Scholar 

  14. J.M. Woodcock, J.M. Shannon, D.J. Clark: Solid-State Electron.18, 267 (1975)

    Article  Google Scholar 

  15. E.D. Davies, J.K. Kennedy, C.E. Ludington: J. Electrochem. Soc.122, 1374 (1975)

    Article  Google Scholar 

  16. B.G. Streetman, R.E. Anderson, D.J. Wolford: J. Appl. Phys.45, 974 (1974)

    Article  ADS  Google Scholar 

  17. Y. Makita, S. Gonda: Jpn. J. Appl. Phys.13, 565 (1974)

    Article  Google Scholar 

  18. Y. Makita, S. Gonda, H. Tanoue, T. Tsurushima, S. Maekawa: Jpn. J. Appl. Phys.13, 563 (1974)

    Article  Google Scholar 

  19. S. Gonda, Y. Makita, S. Maekawa, H. Tanoue, T. Tsurushima: Jpn. J. Appl. Phys.13, 1483 (1974)

    Article  Google Scholar 

  20. D.J. Wolford, B.G. Streetman, R.J. Nelson, N. Holonyak, Jr.: Solid State Commun.19, 741 (1976)

    Article  Google Scholar 

  21. T. Shimada, Y. Shiraki, K.F. Komatsubara: J. Phys. Chem. Solids37, 315 (1976)

    Article  Google Scholar 

  22. D.J. Wolford, R.E. Anderson, B.G. Streetman: J. Appl. Phys.48, 2442 (1977)

    Article  ADS  Google Scholar 

  23. R.E. Anderson, D.J. Wolford, B.G. Streetman: J. Appl. Phys.48, 2453 (1977)

    Article  ADS  Google Scholar 

  24. M.Takai, H.Ryssel, H.Kranz, P.Bayerl: (to be published in Proc. Intern. Conf. on Ion. Beam Modification of Materials, Budapest, Sept. 4–8, 1978)

  25. M. Takai, T. Ishida, K. Gamo, K. Masuda, S. Namba, A. Mizobuchi: Jpn. J. Appl. Phys.16, 1853 (1977)

    Article  Google Scholar 

  26. D.A. Thompson, S.S. Johar, J. Shewchun: J. Electron. Mater.4, 195 (1975)

    Google Scholar 

  27. J.F. Gibbons, W.S. Johnson, S.W. Mylroie:Projected Range Statistics (Dowden, Hutchinson and Ross, Stroudsburg, PA 1975)

    Google Scholar 

  28. M.G. Craford: IEEE Trans. ED-24, 935 (1977)

    Google Scholar 

  29. M. Takai, H. Ryssel: Appl. Phys. Lett.35, 696 (1979)

    Article  ADS  Google Scholar 

  30. M.Takai, H.Ryssel: (to be published in the Proceedings of the Symposium on Laser and Electron Beam Processing of Electronic Materials, Los Angeles, October 14–19, 1979)

  31. H. Okabayashi: InIon Implantation in Semiconductors, ed. by S. Namba (Plenum Press, New York 1975) p. 95

    Google Scholar 

  32. J. Gyulai, J.W. Mayer, I.V. Mitchell, V. Rodriguez: Radiat. Eff.17, 332 (1970)

    Google Scholar 

  33. S.Y. Chiang, G.L. Pearson: J. Lumin.10, 313 (1975)

    Article  Google Scholar 

  34. A.A. Immorlica, F.H. Eisen: Appl. Phys. Lett.29, 94 (1976)

    Article  ADS  Google Scholar 

  35. For example, Proc. Laser-Solid Interactions and Laser Processing, ed. by S.D. Ferris, M.J. Leamy, J.M. Poate (AIP, New York, 1979), and references therein

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Fraunhofer-Institut für Festkörpertechnologie, Paul-Gerhardt-Allee 42, D-8000, München 60, Fed. Rep. Germany

    M. Takai, H. Ryssel & D. Röschenthaler

Authors
  1. M. Takai
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H. Ryssel
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. D. Röschenthaler
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Takai, M., Ryssel, H. & Röschenthaler, D. Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65). Appl. Phys. 21, 241–248 (1980). https://doi.org/10.1007/BF00886174

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00886174

PACS

Search

Navigation