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Ion implantation: A useful tool for semiconductor research

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Abstract

The general features of ion implantation are described in a brief survey to illustrate the usefulness of, and the new possibilities for, semiconductor research provided by implantation of high-energy ions. The advantages for research are explained by presenting examples which make use of the special features of implantation. Macroscopic properties are distinguished from the microscopic ones. Macroscopic properties are, for instance, the doping profile obtained, the flexibility in the choice of the implanted impurity, and the chemical, elastical and optical effects of the radiation damage. Microscopic properties are the various states of incorporation of the impurities after implantation, the interaction of the impurities with radiation defects, and the anomalous diffusion observed.

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  1. Institut für Angewandte Festkörperphysik, Fraunhofer Gesellschaft, D-7800, Freiburg i. B., Fed. Rep. Germany

    M. Schulz

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Schulz, M. Ion implantation: A useful tool for semiconductor research. Appl. Phys. 4, 91–104 (1974). https://doi.org/10.1007/BF00884263

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  • DOI: https://doi.org/10.1007/BF00884263

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