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Controlled gold doping of silicon by using ion implantation

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Abstract

A new technology is suggested to dope silicon devices with gold for carrier life time adjustment with high accuracy and reproducibility. Ion implantation is used to dope the sample with a well defined total amount of gold. This gold dose is redistributed by high temperature anneal. A computer simulation of gold diffusion and experimental radio tracer results show that highly accurate gold doping can be obtained in bulk material when temperatures around 1000 C are applied during the redistribution anneal. Damage free surfaces must be used to reduce the gold content gettered in surfaces.

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Authors and Affiliations

  1. Institut für Angewandte Festkörperphysik, Fraunhofer Gesellschaft, D-7800, Freiburg, Germany

    M. Schulz & A. Goetzberger

  2. AEG-Telefunken, D-7800, Ulm, Germany

    I. Fränz & W. Langheinrich

Authors
  1. M. Schulz
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  2. A. Goetzberger
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  3. I. Fränz
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  4. W. Langheinrich
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Schulz, M., Goetzberger, A., Fränz, I. et al. Controlled gold doping of silicon by using ion implantation. Appl. Phys. 3, 275–280 (1974). https://doi.org/10.1007/BF00887275

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  • DOI: https://doi.org/10.1007/BF00887275

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