Conclusions
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1.
A general expression was obtained for the impedance of the electrolyte-semiconductor contact in the presence of surface levels. The volume properties of the semiconductor also prove substantial.
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2.
Assuming the thickness of the Helmholtz layer equal to zero, we can obtain the impedance of the semiconductor considering the influence of the field effect.
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3.
A number of limiting cases covering various frequency and potential ranges were considered; the frequency characteristics of the contact were found in the absence of surface levels.
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4.
The condition was formulated, upon violation of which the capacitance of the semiconductor and Helmholtz layer of the electrolyte cannot be considered as connected in series.
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5.
Data can be obtained on the surface levels on a semiconductor, as well as data on the volume properties of the semiconductor, from an experimental study of the frequency characteristics of the electrolyte-semiconductor contact.
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The article is published on the basis of the resolution of the Conference of Editors-in-Chief of the Journals of the Academy of Sciences, USSR, from July 12, 1962 as the dissertation work of Yu. Ya. Gurevich.
In conclusion, the authors would like to express their profound gratitude to V. G. Levich and Yu. V. Pleskov for their useful discussion.
Translated from Izvestiya Akademii Nauk SSSR, Seria Khimicheskaya, No. 10, pp. 1776–1785, October, 1964
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Gurevich, Y.Y., Myamlin, V.A. Study of the frequency characteristics of the electrolyte-semiconductor interface. Russ Chem Bull 13, 1685–1693 (1964). https://doi.org/10.1007/BF00849429
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DOI: https://doi.org/10.1007/BF00849429