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On the possible mechanism of the influence of radioactive additives on the chemosorption and the catalytic properties of semiconductors

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Bulletin of the Academy of Sciences of the USSR, Division of chemical science Aims and scope

Summary

  1. 1.

    Expressions for the relative change in the adsorption capacity and catalytic activity of a semiconductor sample in radioactive self-irradiation were obtained on the basis of the electronic theory of catalysis.

  2. 2.

    This effect is related to a change in the concentrations of electrons and holes in the plane of the surface of a radioactive sample. A calculation of these changes has been made on the assumption that they are due both to internal ionization and to stationary charging of the sample during radioactive disintegration.

  3. 3.

    The role of charging is more effective in the case of small specific radioactivities, while the role of ionization is more effective in the case of large specific radioactivities.

  4. 4.

    At a given specific radioactivity, there may be either a positive or a negative effect, depending on the “biography” of the adsorbent (catalyst) and the experimental conditions.

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Literature cited

  1. V. I. Spitsyn, Izv. AN SSSR, Otd. Khim. n.,1958, 11;1960, 8.

  2. A. A. Balandin, V. I. Spitsyn, N. P. Dobrosel'skaya, E. I. Mikhailenko, I. V. Vereshchinskii, and P. Ya. Glazunov, Izv. AN SSSR, Otd. Khim. n.,1961, 4.

  3. F. F. Vol'kenshtein, Electronic Theory of Catalysis on Semiconductors [in Russian] (Fizmatgiz, 1960).

  4. F. F. Vol'kenshtein, Kinetika i Kataliz,2, 481 (1961).

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  5. V. G. Baru, Kinetika i Kataliz (in press).

  6. V. Shockley and V. Reed, Collection: Semiconductor Instruments [Russian translation] (IL, 1953), p. 121.

  7. V. I. Spitsyn, A. A. Balandin, I. E. Mikhailenko, and N. P. Dobrosel'skaya, DAN SSSR,146, 5 (1962).

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Authors and Affiliations

  1. Institute of Physical Chemistry, Academy of Sciences of the USSR, USSR

    V. G. Baru & F. F. Vol'kenshtein

Authors
  1. V. G. Baru
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  2. F. F. Vol'kenshtein
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Additional information

The article is published on the basis of a resolution of the Conference of Editors-in-Chief of the journals of the Academy of Sciences of the USSR from July 12, 1962, as the dissertation work of V. G. Baru.

Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya No. 11, pp. 1935–1943, November, 1964

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Baru, V.G., Vol'kenshtein, F.F. On the possible mechanism of the influence of radioactive additives on the chemosorption and the catalytic properties of semiconductors. Russ Chem Bull 13, 1843–1850 (1964). https://doi.org/10.1007/BF00844474

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  • DOI: https://doi.org/10.1007/BF00844474

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