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Effects of surface recombination on the reverse current of thin-base Ge diodes

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Abstract

Base recombination rates are given for Ge diodes made from n-type material of specific resistance 10 ohm-cm. The surface recombination rate S is dependent on the medium, as is the reverse current. Good agreement with theory is obtained for the current.

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References

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Authors and Affiliations

  1. Kuznetsov Siberian Institute of Technical Physics, USSR

    V. I. Gaman & V. M. Kalygina

Authors
  1. V. I. Gaman
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  2. V. M. Kalygina
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Additional information

We are indebted to L. V. Lutsevich and S. V. Pokrovskaya (Institute of Semiconductor Physics, Siberian Division, AS USSR) for assistance with the field-effect experiments.

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Gaman, V.I., Kalygina, V.M. Effects of surface recombination on the reverse current of thin-base Ge diodes. Soviet Physics Journal 10, 57–59 (1967). https://doi.org/10.1007/BF00843554

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  • DOI: https://doi.org/10.1007/BF00843554

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