Abstract
The frequency and temperature dependence of the field effect in insulated CdS films was investigated at various photoexcitation levels. In the dark the field effect characteristics are determined by capture of induced majority carriers at the attachment centers. Under illumination, minority carriers (holes) play a substantial part in screening the field at low frequencies.
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Collection: Problems in Film Electronics [in Russian], Sov. radio, Moscow, 1966.
I. A. Karpovich, M. A. Giraev, and B. N. Zvonkov, Radiotekhnika i Electronika, (in press).
I. A. Karpovich and B. N. Zvonkov, Fizika tverdogo tela,6, 3392, 1964.
J. Dresner and F. V. Shallcross, J. Appl. Phys.,34, 2390, 1963.
M. A. Giraev, I. A. Karpovich, and B. N. Zvonkov, Fizika tverdogo tela,6, 2198, 1964.
H. C. Montgomery, Phys. Rev.,106, 441, 1957.
C. G. B. Garrett, Phys. Rev.,107, 478, 1957.
A. E. Yunovich,28, 689, 1958; FTT, 1, 908, 1092, 1959.
S. M. Ryvkin, Photoelectric Phenomena in Semiconductors [in Russian], Fitzmatgiz, Moscow, 1963.
C. G. B. Garrett and W. H. Brattain, Phys. Rev.,99, 376, 1955.
J. Tautz, Photo- and Thermoelectric Phenomena in Semiconductors [Russian translation], IL, Moscow, 1962.
W. E. Spear and G. Mort, Proc. Phys. Soc.,81, 130, 1963.
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Karpovich, I.A., Giraev, M.A. Field effect in photosensitive CdS films. Soviet Physics Journal 10, 61–64 (1967). https://doi.org/10.1007/BF00838534
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DOI: https://doi.org/10.1007/BF00838534