Abstract
A possible explanation is postulated of the experimentally observed (under certain conditions) dependence of the reverse current of geranium and silicon diodes on the applied voltage. The explanation is based on a supposition that the probability of the generation of electrons and holes by recombination centers in the zone of the volume charge of a p-n junction (to which an inverse voltage is applied) is increased due to the thermal ionization being facilitated by the electric field.
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Gaman, V.I. The Frenkel effect in semiconductor diodes. Soviet Physics Journal 10, 53–56 (1967). https://doi.org/10.1007/BF00838532
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DOI: https://doi.org/10.1007/BF00838532