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Study of lamellarly inhomogeneous semiconductor structures on the basis of the spectrum of reflected radiation

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Abstract

A nondestructive method of determining the parameters of epitaxial film systems is proposed based on a variational method of computing the coefficients of reflection and transmission of an electromagnetic wave in lamellarly inhomogeneous semiconductor structures. Structures of the type low-alloy film-transition layer-high-alloy substrate are considered with various prescriptions for varying the concentration of the alloying additives in the transition layer near the plasma resonance of the charge carriers in the substrate. Preliminary experimental investigations of the epitaxial N-N+ structures of silicon are in satisfactory agreement with computed data. The proposed method makes it possible to determine the thickness of the low-alloy layer and of the transition layer separately on the basis of the spectral dependence of the reflected radiation.

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Authors and Affiliations

  1. Chernyshevskii Saratov State University, USSR

    D. I. Bilenko, V. S. Il'in, G. P. Kostyunina & N. P. Kazanova

Authors
  1. D. I. Bilenko
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  2. V. S. Il'in
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  3. G. P. Kostyunina
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  4. N. P. Kazanova
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 3, pp. 97–104, March, 1972.

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Bilenko, D.I., Il'in, V.S., Kostyunina, G.P. et al. Study of lamellarly inhomogeneous semiconductor structures on the basis of the spectrum of reflected radiation. Soviet Physics Journal 15, 385–391 (1972). https://doi.org/10.1007/BF00834603

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  • DOI: https://doi.org/10.1007/BF00834603

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