Abstract
Static characteristics are considered for point-contact germanium diodes at high inverse voltages; the results are found to agree closely with experiment.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Semiconductors in Science and Technology [in Russian], vol. 1, p. 151, 1957.
S. Benzer, Journ. Appl. Phys., vol. 20, no. 8, 804, 1949.
I. M. Senderikhin and P. V. Sharavskii, Fiz. Tverd. Tela, 2, no. 7, 1497, 1960.
I. M. Senderikhin, Fiz. Tverd. Tela, 2, no. 7, 1506, 1960.
I. M. Senderikhin, Izv. VUZ. Fizika, no. 1, 122, 1964.
J. Tillman and J. Henderson, Phil. Magazine, vol. 44, 677, 1953.
E. Billig, D. Tech. Proc. Roy. Soc., A, vol. 207, 151, 1951.
H. Kromer, Z. für Phys., vol. 134, no. 4, 435, 1953.
A. F. Ioffe, The Physics of Semiconductors [in Russian], pp. 280, 293, 1957.
L. Hunter, Phys, Rev., 81, sec. ser. 1, 151, 1951.
H. Armstrong, Journ. Appl. Phys., vol. 24, no. 10, 1332, 1953.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Senderikhin, I.M. Allowance for image forces and heating in calculating the static parameters of germanium point-contact diodes. Soviet Physics Journal 8, 54–57 (1965). https://doi.org/10.1007/BF00827918
Issue Date:
DOI: https://doi.org/10.1007/BF00827918