Abstract
The critical frequency of type P-4 transistors is examined as a function of injection level and geometry of p-n-p structure; the results are compared with the theory [6,7]. The discrepancies at high levels may be explained in terms of scattering at moving carriers.
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I am indebted to Professor A. B. Sapozhnikov and to Drs. V.N. Detinko and A. S. Maidanovskii for valuable discussions.
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Vazhenin, I.N. Relation of critical frequency to emitter current for P-4 transistors. Soviet Physics Journal 8, 51–53 (1965). https://doi.org/10.1007/BF00827917
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DOI: https://doi.org/10.1007/BF00827917