Abstract
A three-layer equivalent circuit for an inhomogeneous dielectric or semiconductor is described. This circuit can be used for describing dielectric dispersion in ferrites and other materials. Barrier layers, localized at inhomogeneities, are shown to be responsible for the low-frequency dispersion in ferrites.
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References
L. A. Kuznetsova and P. T. Oreskhin, Izvestiya VUZ. Fizika [Soviet Physics Journal], no. 2, 1968.
B. K. Starchenkov and N. N. Rasskazova, collection: Conductivity Relaxation Phenomena in Dielectrics and Semiconductors, and Microelectronics [in Russian], Trudy RRTI, no. 13, Ryazan, 1968.
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Oreshkin, P.T., Starchenkov, B.K. & Kuznetsova, L.A. A note on the theory of dielectric dispersion in inhomogeneous dielectrics and semiconductors. Soviet Physics Journal 11, 15–18 (1968). https://doi.org/10.1007/BF00822460
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DOI: https://doi.org/10.1007/BF00822460