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Stacking faults in crystals and the model of configurational localization

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Abstract

The energy changes of stacking faults in metals and alloys are discussed in connection with the formation of stable electronic configurations of the fault atoms. The results of the discussions can be used to predict the effect of the admixture of one element on the stackingfault energy for another element.

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Authors and Affiliations

  1. Kiev Polytechnical Institute, USSR

    G. Sh. Upadkhaya

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 8, pp. 38–45, August, 1969.

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Upadkhaya, G.S. Stacking faults in crystals and the model of configurational localization. Soviet Physics Journal 12, 1003–1009 (1969). https://doi.org/10.1007/BF00820930

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  • DOI: https://doi.org/10.1007/BF00820930

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