Abstract
Computations are carried out of the concentration distribution of inequilibrium charge carriers in semiconductor material with no restrictions on the excitation form — photo-excitation or excitation by electron beam, etc. — and likewise no restrictions on the spatial “map’ of excitation except for axial symmetry of the excitation function. Some particular cases are considered.
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N. P. Aban'shin, D. I. Bilenko, and V. A. Lodgauz, Izv. VUZ, Fiz., No. 3, 133 (1970).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 47–51, August, 1971.
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Aban'shin, N.P., Bilenko, D.I. & Lodgauz, V.A. Concentration distribution of inequilibrium charge carriers for axially symmetric excitation. Soviet Physics Journal 14, 1056–1059 (1971). https://doi.org/10.1007/BF00820066
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DOI: https://doi.org/10.1007/BF00820066