Abstract
A method previously developed [4, 6] is applied to the temperature dependence of the mobility in NiO and Fe2O3. The possible role of a perturbation B(t) is evaluated by formulating the conditions for which scattering at B(t) predominates over other mechanisms. The agreement with experiment is satisfactory for T < TN.
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Ginzburg, L.P. Theory of transport in semiconductors of the NiO-Fe2O3 type. Soviet Physics Journal 10, 35–39 (1967). https://doi.org/10.1007/BF00818212
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DOI: https://doi.org/10.1007/BF00818212